Epitaxial III-V semiconductors for integrated electro-optics. Final report, 1 August 1986-30 April 1988
Research was conducted on the synthesis and evaluation of new organometallics (OM), growth of epitaxial layers by OMCVD and laser chemical vapor deposition (LCVD), laser interaction with materials, structural and chemical evaluation of epitaxial layers, electrical evaluation of epitaxial layers and radiation effects in semiconductors and insulators. New OM precursors were developed and used in OMCVD. New OM sources are considered for lower toxicity and more efficient reaction. For the first time, InSb was grown in CdTe by OMCVD. A quadrupole mass analyzer and low temperature luminescence were installed for in situ diagnostics. Laser interaction studies reveal the importance of tunneling ionization for carrier generation in low bandgap materials. Ion emission was measured from a metal surface due to laser irradiation. Ions were observed at low laser fluence and at a frequency corresponding to an energy less than the material work function. Rocking-curve studies of MBE-grown strained GaInAs on GaAs is the most-reliable technique for strains < 0.3%. LO-TO splitting in ion-damaged GaAs has been explained by the effective ionic charge of the ion-beam-induced point defects. Deep-level transient spectroscopy studies of irradiated p-InP has revealed trap levels and annealing effects of importance in extraterrestrial applications. A Yb/p-InP device has shown good linearity and improved stability as a temperature sensor from 100-400K. Thin (150 A) oxides on Si for VLSI applications were found to be more radiation tolerant compared to thicker oxides.
- Research Organization:
- State Univ. of New York, Buffalo (USA). Dept. of Electrical Engineering
- OSTI ID:
- 6669580
- Report Number(s):
- AD-A-197529/1/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
CADMIUM TELLURIDES
ELECTRO-OPTICAL EFFECTS
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
SEMICONDUCTOR MATERIALS
ANNEALING
CHEMICAL REACTIONS
EFFICIENCY
ELECTRICAL PROPERTIES
EMISSION
IONIZATION
IONS
IRRADIATION
LAYERS
LOW TEMPERATURE
LUMINESCENCE
METALS
ORGANOMETALLIC COMPOUNDS
OXIDES
PROGRESS REPORT
RADIATION EFFECTS
RELIABILITY
SURFACES
SYNTHESIS
WORK FUNCTIONS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
DOCUMENT TYPES
ELECTRONIC CIRCUITS
ELEMENTS
FUNCTIONS
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
MICROELECTRONIC CIRCUITS
ORGANIC COMPOUNDS
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
TELLURIDES
TELLURIUM COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360605 - Materials- Radiation Effects
420800 - Engineering- Electronic Circuits & Devices- (-1989)