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Studies of the gas-phase reactive intermediates formed by heterogeneous processes in chlorosilane chemical vapor deposition using photoelectron spectroscopy and mass spectrometry

Journal Article · · Journal of Physical Chemistry; (USA)
DOI:https://doi.org/10.1021/j100364a055· OSTI ID:6666487
; ;  [1]
  1. California Institute of Technology, Pasadena (USA)

Photoelectron spectroscopy and mass spectrometry have been employed to identify gas-phase reactive intermediates in chlorosilane (SiH{sub 2}Cl{sub 2}, SiHCl{sub 3}) chemical vapor deposition (CVD) under heterogeneous flash vacuum pyrolytic conditions. Dichlorosilylene (SiCl{sub 2}) and hydrogen chloride (HCl) are the major gas-phase products in the heterogeneous decomposition of SiH{sub 2}Cl{sub 2} and SiHCl{sub 3} on several surfaces above 600 and 800{degree}C, respectively. SiCl{sub 2} and HCl desorb from the surface at these temperatures, and these species are likely to be important in the removal of excess chlorine and hydrogen from the growing polycrystalline thin silicon film. This results, combined with earlier studies in which dichlorosilylene was detected in the homogeneous IR multiphoton decomposition of dichlorosilane, indicates that monochlorosilylene (SiHCl) is not an abundant gas-phase intermediate in both homogeneous and heterogeneous CVD systems with dichlorosilane as a source gas.

OSTI ID:
6666487
Journal Information:
Journal of Physical Chemistry; (USA), Journal Name: Journal of Physical Chemistry; (USA) Vol. 94:1; ISSN JPCHA; ISSN 0022-3654
Country of Publication:
United States
Language:
English