Copper-diamond composite substrates for electronic components
Conference
·
OSTI ID:66659
- Sun Microsystems, Mountain View, CA (United States)
- Lawrence Livermore National Lab., CA (United States)
High-power density electronic components such as fast microprocessors and power semiconductors are often limited by inability to keep the device junctions below their max rated operating temperature. Present high power multichip module and single chip package designs use substrate materials such as Si nitride or copper tungsten with thermal conductivity in the range of 200 W/m{center_dot}K. We have developed a copper-diamond composite (Dymalloy) with a thermal conductivity of 420 W/m{center_dot}K, better than Cu, and an adjustable thermal expansion coefficient (TCE=5.5 ppM/C at 25 C), compatible with Si and GaAs. Because of the matched TCE, it is possible to use low thermal resistance hard die attach methods. The mechanical properties of the composite also make it attractive as an electronic component substrate material.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 66659
- Report Number(s):
- UCRL-JC--118992; CONF-9505121--2; ON: DE95011520
- Country of Publication:
- United States
- Language:
- English
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