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Title: Dymalloy: A composite substrate for high power density electronic components

Abstract

High power density electronic components such as fast microprocessors and power semiconductors must operate below the maximum rated device junction temperature to ensure reliability. function temperatures are determined by the amount of heat generated and the thermal resistance from junction to the ambient thermal environment. Two of the Largest contributions to this thermal resistance are the die attach interface and the package base. A decrease in these resistances can allow increased component packing density in MCMs, reduction of heat sink volume in tightly packed systems, enable the use of higher performance circuit components, and improve reliability. The substrate for high power density devices is the primary thermal link between the junctions and the heat sink. Present high power multichip modules and single chip packages use substrate materials such as silicon nitride or copper tungsten that have thermal conductivity in the range of 200 W/mK. We have developed Dymalloy, a copper-diamond composite, that has a thermal conductivity of 420 W/mK and an adjustable coefficient of thermal expansion, nominally 5.5 ppm/C at 25 C, compatible with silicon and gallium arsenide. Because of the matched coefficient of thermal expansion it is possible to use low thermal resistance hard die attach methods. Dymalloy ismore » a composite material made using micron size Type I diamond powder that has a published thermal conductivity of 600 to 1000 W/mK in a metal matrix that has a thermal conductivity of 350 W/mK. The region of chemical bonding between the matrix material and diamond is limited to approximately 1000 A to maintain a high effective thermal conductivity for the composite. The material may be fabricated in near net shapes. Besides having exceptional thermal properties, the mechanical properties of this material also make it an attractive candidate as an electronic component substrate material.« less

Authors:
; ;  [1];  [2]
  1. Lawrence Livermore National Lab., CA (United States)
  2. Sun Microsystems, Mountain View, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
112941
Report Number(s):
UCRL-JC-121193; CONF-9510190-1
ON: DE96000395
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: 28. international symposium on microelectronics: showcasing the stars of microelectronics and 1. international symposium on ball grid array, Los Angeles, CA (United States), 22-26 Oct 1995; Other Information: PBD: 29 Jun 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPOSITE MATERIALS; THERMAL CONDUCTIVITY; THERMAL EXPANSION; COPPER ALLOYS; SILVER ALLOYS; SUBSTRATES; DIAMONDS

Citation Formats

Kerns, J A, Colella, N J, Makowiecki, D, and Davidson, H L. Dymalloy: A composite substrate for high power density electronic components. United States: N. p., 1995. Web.
Kerns, J A, Colella, N J, Makowiecki, D, & Davidson, H L. Dymalloy: A composite substrate for high power density electronic components. United States.
Kerns, J A, Colella, N J, Makowiecki, D, and Davidson, H L. Thu . "Dymalloy: A composite substrate for high power density electronic components". United States. https://www.osti.gov/servlets/purl/112941.
@article{osti_112941,
title = {Dymalloy: A composite substrate for high power density electronic components},
author = {Kerns, J A and Colella, N J and Makowiecki, D and Davidson, H L},
abstractNote = {High power density electronic components such as fast microprocessors and power semiconductors must operate below the maximum rated device junction temperature to ensure reliability. function temperatures are determined by the amount of heat generated and the thermal resistance from junction to the ambient thermal environment. Two of the Largest contributions to this thermal resistance are the die attach interface and the package base. A decrease in these resistances can allow increased component packing density in MCMs, reduction of heat sink volume in tightly packed systems, enable the use of higher performance circuit components, and improve reliability. The substrate for high power density devices is the primary thermal link between the junctions and the heat sink. Present high power multichip modules and single chip packages use substrate materials such as silicon nitride or copper tungsten that have thermal conductivity in the range of 200 W/mK. We have developed Dymalloy, a copper-diamond composite, that has a thermal conductivity of 420 W/mK and an adjustable coefficient of thermal expansion, nominally 5.5 ppm/C at 25 C, compatible with silicon and gallium arsenide. Because of the matched coefficient of thermal expansion it is possible to use low thermal resistance hard die attach methods. Dymalloy is a composite material made using micron size Type I diamond powder that has a published thermal conductivity of 600 to 1000 W/mK in a metal matrix that has a thermal conductivity of 350 W/mK. The region of chemical bonding between the matrix material and diamond is limited to approximately 1000 A to maintain a high effective thermal conductivity for the composite. The material may be fabricated in near net shapes. Besides having exceptional thermal properties, the mechanical properties of this material also make it an attractive candidate as an electronic component substrate material.},
doi = {},
url = {https://www.osti.gov/biblio/112941}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {6}
}

Conference:
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