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Investigation of reactive ion etching induced damage in GaAs--AlGaAs quantum well structures

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584142· OSTI ID:6661880
We report on the use of a novel technique to study reactive ion etching (RIE) induced damage using multiple quantum wells of 20-, 40-, 60-, and 90-A widths as in situ probes. Cathodoluminescence (CL) at low temperature, using a finely focused electron beam, allows sensitive determination of the quality of individual quantum wells before and after RIE damage. There is a correspondence between individual luminescence peaks and the depth of the particular quantum well. We can therefore use the CL spectral information to provide a sensitive profile of the depth of RIE induced damage. Various etching conditions and the effects of postetch anneals are examined. Pure Ar sputtering and enhanced chemical etching using CCl/sub 2/F/sub 2//BCl/sub 3/ at different bias voltages are investigated. Our results reveal that the degree and spatial extent of damage increase with increasing ion energy and decreasing ion mass.
Research Organization:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
OSTI ID:
6661880
Journal Information:
J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:6; ISSN JVTBD
Country of Publication:
United States
Language:
English