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Nickel silicon phases by ion implantation

Thesis/Dissertation ·
OSTI ID:6656691
Composition, phase, and microstructural developments resulting from the implantation of silicon ions into nickel were investigated, using Auger electron spectroscopy, transmission electron microscopy, and other methods. Implanted silicon content ranged from 10 to 90 at% at temperatures from 25 to 650/sup 0/C. Below 200/sup 0/C, implanted silicon concentration was high at the surface, fell, rose with depth to a maximum value near 1400 A, then decreased to zero by 3000 A. The maximum concentration of silicon increased with increasing fluence. About 350/sup 0/C, increasing fluence had little effect on the peak silicon concentration, which remained below 28 at%. However, increasing fluence at high temperature resulted in penetration of the silicon two or three times deeper than at room temperature. Phases resulting from implantation above 350/sup 0/C resemble the equilibrium phase diagram in composition and temperature. However, the Ni/sub 3/Si phase was observed only at temperatures exceeding 500/sup 0/C. Below 500/sup 0/C, the Ni/sub 5/Si/sub 2/ phase was seen instead. The microstructural results of implanting fluences greater than 1 x 10/sup 18/ Si/sup +//cm/sup 2/ depended upon temperature. Above 250/sup 0/C the matrix recrystallized. Below 200/sup 0/C, very strong diffuse rings were observed at d-spacings shared by several nickel silicides.
Research Organization:
Connecticut Univ., Storrs (USA)
OSTI ID:
6656691
Country of Publication:
United States
Language:
English