Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction

Journal Article · Mon May 11 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97853· OSTI ID:6651763

Muralt, P; Meier, H; Pohl, D W; Salemink, H W.M.

The potential distribution across the cleaved end face of a forward-biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space-charge regions next to the heterojunction interface as well as the electron-hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.

• Research Organization: IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland
• OSTI ID: 6651763
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:19; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
MAPPING
MICROSCOPY
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACES
TUNNEL EFFECT