Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P/sup +/ implanted Si on subsequent laser annealing

Journal Article · Sun Feb 01 04:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328756· OSTI ID:6627439

Sadana, D K; Strathman, M; Washburn, J; Booker, G R

This work is aimed at studying the regrowth behavior of single and double buried damage layers on subsequent laser annealing of P/sup +/ implanted Si, implanted at 120 keV to doses of 5 x 10/sup 14//cm/sup 2/ and 7.5 x 10/sup 15//cm/sup 2/, respectively. A Q-switched ruby laser operating at a wavelength of 1094 nm was used for the annealing. 90/sup 0/ cross-sectional transmission electron microscopy (TEM) and MeV He/sup +/ channeling spectroscopy were used to examine the damage structures and their depth distributions. At 0.9 J/cm/sup 2/, TEM results showed that the single buried damage layer regrew into two discrete damage layers. At 2.0 J/cm/sup 2/, TEM results showed that the first layer in the double buried damage layers type structures either completely anneal out, leaving a partially annealed second layer consisting of damage clusters or had dislocations in the first damage layer region that extended from the surface and were in direct contact with the deeper lying second layer of damage clusters. The MeV He/sup +/ channeling spectra for the above samples were in agreement with the TEM results.

• Research Organization: Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 6627439
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DATA
DISLOCATIONS
DISTRIBUTION
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EXPERIMENTAL DATA
HEAT TREATMENTS
HEATING
INFORMATION
ION IMPLANTATION
IONS
KEV RANGE
LASER-RADIATION HEATING
LASERS
LAYERS
LINE DEFECTS
MEV RANGE
MICROSCOPY
NUMERICAL DATA
PHOSPHORUS IONS
PLASMA HEATING
Q-SWITCHING
RUBY LASERS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
SOLID STATE LASERS
SPATIAL DISTRIBUTION
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY