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TEM and RBS studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing

Journal Article · · Journal of Applied Physics
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This work is aimed at studying the regrowth behaviour of single and double buried damage layers on subsequent laser annealing of P+ implanted Si, implanted at 120 keV to doses of 5 x 1014/cm2 and 7.5 x1015/cm2, respectively. A Q-switched ruby laser operating at a wavelength of 0.695micro m was used for the annealing. 90° cross sectional TEM and MeV He+ channelling spectroscopy were used to examine the damage structures and their depth distributions. At 0.9 J/cm2, TEM results showed that the single buried damage layer regrew into two discrete damage layers. At 2.0 J/cm2, TEM results showed that the first layer in the double buried damage layers type structures either completely annealout out, leaving a partially annealed second layer consisting of damage clusters or had dislocations in the first damage layer region that extended from the surface and were in direct contact with the deeper lying second layer of damage clusters. The MeV He+ channelling spectra for the above samples were in agreement with the TEM results.
Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
Materials Sciences Division
DOE Contract Number:
AC02-05CH11231
OSTI ID:
1064034
Report Number(s):
LBL-10625
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics
Country of Publication:
United States
Language:
English

Figures / Tables (7)

Table I(p. 11)table Table I
Fig. 1(p. 12)figure Fig. 1
Fig. 2(p. 13)figure Fig. 2
Fig. 3(p. 14)figure Fig. 3
Fig. 4(p. 15)figure Fig. 4
Fig. 5(p. 16)figure Fig. 5
Fig. 6(p. 17)figure Fig. 6

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Related Subjects

36 MATERIALS SCIENCE