Process for producing an injection laser and laser obtained by this process
Patent
·
OSTI ID:6627115
Process for producing an injection laser and laser obtained by this process. The active layer is weakly N doped. The same mesa is used for carrying out a proton implantation and a zinc diffusion. The active stripe is transversely limited by two homojunctions and two index jumps and the final structure is planar. In addition, there is an auto-alignment of the implanted and diffused zones. Application to the construction of lasers used in optical telecommunication systems.
- Assignee:
- EDB-83-043765
- Patent Number(s):
- US 4341570
- OSTI ID:
- 6627115
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering
Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs
Mode control of heterojunction injection lasers and method of fabrication
Journal Article
·
Mon Oct 06 00:00:00 EDT 1986
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5261525
Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs
Journal Article
·
Mon May 14 00:00:00 EDT 1990
· Applied Physics Letters; (USA)
·
OSTI ID:6813352
Mode control of heterojunction injection lasers and method of fabrication
Patent
·
Tue Jul 07 00:00:00 EDT 1981
·
OSTI ID:5767880
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
AUTOMATION
BARYONS
COMMUNICATIONS
DIFFUSION
DOPED MATERIALS
ELEMENTARY PARTICLES
ELEMENTS
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
IMPLANTS
INJECTION
INTAKE
JUNCTIONS
LASERS
MATERIALS
METALS
NUCLEONS
OPTICAL SYSTEMS
PNICTIDES
PRODUCTION
PROTONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
TELEPHONES
ZINC
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
AUTOMATION
BARYONS
COMMUNICATIONS
DIFFUSION
DOPED MATERIALS
ELEMENTARY PARTICLES
ELEMENTS
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
IMPLANTS
INJECTION
INTAKE
JUNCTIONS
LASERS
MATERIALS
METALS
NUCLEONS
OPTICAL SYSTEMS
PNICTIDES
PRODUCTION
PROTONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
TELEPHONES
ZINC