Current status of /GaAl/As diode lasers
Conference
·
· Proc. Soc. Photo-Opt. Instrum. Eng.; (United States)
OSTI ID:6627048
The general operating principles of CW double heterostructure diode lasers are discussed to indicate the sources of gain, waveguidance and resonance. Gain-guided lasers are noted to be astigmatic and the 'kink' phenomenon, which troubles those devices with wider stripes, is explained. The very narrow stripe gain-guided laser is shown to suffer from severe astigmatism and an undesirable far field pattern even though it is free of kinks. Three types of real refractive index waveguide lasers are considered in turn: the channelled-substrate-planar (CSP), the strip buried (SB), and lasers with laterally tapered layers. Within the last group are the plano-convex waveguide (PCW) laser, the non-planar large-optical-cavity (NP-LOC) device, and otherwise conventional lasers with tapered active regions. The operating principle, characteristics and shortcomings of each are discussed and the general classes of gain-guided and real refractive index waveguide lasers are compared. An optimal design for a waveguide laser is proposed.
- Research Organization:
- Xerox Palo Alto Research Center, Palo Alto, CA
- OSTI ID:
- 6627048
- Report Number(s):
- CONF-810204-
- Conference Information:
- Journal Name: Proc. Soc. Photo-Opt. Instrum. Eng.; (United States) Journal Volume: 269
- Country of Publication:
- United States
- Language:
- English
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Journal Article
·
Fri Nov 30 23:00:00 EST 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:6354599
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Thesis/Dissertation
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Mon Dec 31 23:00:00 EST 1979
·
OSTI ID:5408464
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGE DISTRIBUTION
DESIGN
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
OPTICAL MODES
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
POWER GENERATION
PUMPING
REFRACTIVITY
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
TECHNOLOGY ASSESSMENT
WAVEGUIDES
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGE DISTRIBUTION
DESIGN
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
OPTICAL MODES
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
POWER GENERATION
PUMPING
REFRACTIVITY
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
TECHNOLOGY ASSESSMENT
WAVEGUIDES