Custom MOS LSI circuit design

Conference · Thu Jan 01 00:00:00 EST 1981

OSTI ID:6624682

Gwyn, C W

Sandia has developed a custom IC design capability to provide high-reliability, radiation-hardened custom circuits. This design capability relies on: computer aids to minimize design time and errors and to standardize the design process; the use of well-characterized cells and models; a close adherence to a list of practical design guidelines; and a close working relationship with the customer and processing laboratory. The formal design guidelines advocate design for testability, producibility, radiation hardness, and reliability. Prototype and production quantities of custom radiation-hardened ICs are fabricated in the Center for Radiation-Hadened Microelectronics (CRM) Semiconductor Development Laboratory.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6624682
• Report Number(s): SAND-81-0999C; CONF-810529-1
• Resource Relation: Conference: IEEE custom integrated circuits conference, Rochester, NY, USA, 11 May 1981
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
COMPUTER-AIDED DESIGN
MOS TRANSISTORS
ELECTRONIC CIRCUITS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)