Plasma heating in highly excited GaN/AlGaN multiple quantum wells
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 85718-0601 (United States)
- Department of Electrical Engineering and Physics, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States)
Time-resolved photoluminescence (PL) spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well (MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperature PL spectra showed optical transitions involving both confined and unconfined states in the quantum well structure. Analysis of the experimental results using a microscopic theory, indicates that at high excitation the carrier distributions are characterized by plasma temperatures which are significantly higher than the lattice temperature. The implications of our findings on GaN MQW laser design are also discussed. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 662168
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 73; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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