Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
- Materials Research Laboratory and Coordinated Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (L{sub w}{lt}40{Angstrom}) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 {Angstrom}, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (L{sub w}{gt}40{Angstrom}) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (L{sub w}{gt}40{Angstrom}). The implications of these results on the device applications based on III-nitride MQWs have been discussed. {copyright} {ital 1997 American Institute of Physics.}
- DOE Contract Number:
- FG03-96ER45604
- OSTI ID:
- 664478
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 71; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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