Diamondlike carbon deposition on silicon using radio-frequency inductive plasma of Ar and C{sub 2}H{sub 2} gas mixture in plasma immersion ion deposition

Journal Article · Thu Oct 01 00:00:00 EDT 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122469· OSTI ID:662164

Lee, D H; He, X M; Walter, K C; Nastasi, M; Tesmer, J R; Tuszewski, M ^[1]; Tallant, D R ^[2]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)

Diamondlike carbon (DLC) was deposited on silicon using a plasma immersion ion deposition (PIID) method. Inductive radio-frequency plasma sources were used to generate Ar and C{sub 2}H{sub 2} plasmas at low gas pressures ranging from 0.04 to 0.93 Pa. The film stress and hardness were sharply dependent upon bias voltage at an operating pressure of 0.04 Pa. A maximum hardness of 30 GPa and compressive stress of 9 GPa was observed at a pulsed bias of {minus}150 V bias (carbon energy of 80 eV). The mechanical properties of DLC films are correlated with UV Raman peak positions which infer sp{sup 3}-bonded carbon contents. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 662164
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 73; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ADHESION
CARBON
CHEMICAL VAPOR DEPOSITION
HARDNESS
PLASMA
RAMAN SPECTRA
SILICON
STRESSES
THIN FILMS
ULTRAVIOLET SPECTRA