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Title: In situ epitaxial growth of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub x/ films by molecular beam epitaxy with an activated oxygen source

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100545· OSTI ID:6619486

Highly oriented, epitaxial Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub x/ thin films were prepared on MgO(100) by molecular beam epitaxy at a substrate temperature of 550--600 /sup 0/C. The in situ growth was achieved by incorporating reactive oxygen species produced by a remote microwave plasma in a flow-tube reactor. The epitaxial (001) orientation is demonstrated by x-ray diffraction and ion channeling. In situ reflection high-energy electron diffraction showed that a layer-by-layer growth has produced a well-ordered, atomically smooth surface in the as-grown tetragonal phase of an oxygen stoichiometry of 6.2--6.3. A 500 /sup 0/C anneal in 1 atm of O/sub 2/ converted the oxygen content to 6.7 to 6.8. Typical superconducting transport properties of an Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub x/ film 1000 A thick are rho(300 K) = 325 ..mu cap omega.. cm, rho(300 K)/rho(100 K) = 2.4, T/sub c/(onset) = 92 K, and T/sub c/(R = 0) = 82 K. The transport J/sub c/ at 75 K is 1 x 10/sup 5/ A/cm/sup 2/, and increases to 1 x 10/sup 6/ A/cm/sup 2/ at 70 K.

Research Organization:
ATandT Bell Laboratories, Murray Hill, New Jersey 07974
OSTI ID:
6619486
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 53:26
Country of Publication:
United States
Language:
English

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