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U.S. Department of Energy
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Development and evaluation of die and container materials. Third quarterly progress report, April 1--June 30, 1978. [For molten silicon]

Technical Report ·
DOI:https://doi.org/10.2172/6617945· OSTI ID:6617945
Methods of producing low-cost silicon sheet for solar cells are under active development. In the crystal-growing processes a refractory crucible is required to hold the molten silicon, while in the ribbon processes an additional refractory shaping die is needed to enable silicon ribbon to be produced. In several ribbon processes the high-temperature materials are a limiting factor in the development of the technique. The objective of this study is to develop and evaluate refractory die and container materials. Mass spectrometric studies of molten silicon in contact with silicon nitride and silicon carbide show that the vapor pressure of silicon is lower over these materials than over the oxides (beryllium oxide, alumina, and silica) studied previously. Measured carbon and nitrogen contents are 6.4 x 10/sup 19/ atoms/cm/sup 3/ and 3.3 x 10/sup 18/ atoms/cm/sup 3/, respectively. The fabrication of O' and ..beta..' Sialons was found to be strongly dependent upon the nature of the silicon nitride powder. A modified hot pressing procedure was adopted to allow volatilization of chlorine-containing species from the SN402 grade powder. ..beta..' Sialon of composition X = 1 appears to offer some promise as a candidate die material, but materials containing a higher alumina composition (X = 2.4 Sialon) or the phase known as X phase with molten silicon. O' Sialons of compositions X = 0.1, X = 0.2, and X = 0.35 reacted with molten silicon, forming a complex interface zone. The concentration of thin precipitates in the silicon increased with the alumina content of the O' Sialon solid solution.
Research Organization:
Battelle Columbus Labs., OH (USA)
DOE Contract Number:
NAS-7-100-954876
OSTI ID:
6617945
Report Number(s):
DOE/JPL/954876-78/3
Country of Publication:
United States
Language:
English