Conduction mechanisms in sputtered Ta/sub 2/O/sub 5/ on Si with an interfacial SiO/sub 2/ layer

Journal Article · Wed Feb 01 00:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343052· OSTI ID:6617169

Banerjee, S; Shen, B; Chen, I; Bohlman, J; Brown, G; Doering, R

The temperature dependence of leakage in sputtered Ta/sub 2/O/sub 5/ films (10--30 nm) on Si substrates with an interfacial SiO/sub 2/ layer has been studied for temperatures between --50 and +100 /sup 0/C and for electric fields between 0 and 2 MV/cm. The activation energy of leakage and the current-voltage relationships have been used to identify various high field conduction mechanisms such as Poole--Frenkel transport at high temperatures and field emission at low temperatures. At low fields and intermediate temperatures, electronic hopping conduction leading to space-charge-limited flow at high current densities has been observed.

• Research Organization: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
• OSTI ID: 6617169
• Journal Information: J. Appl. Phys.; (United States), Vol. 65:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
TANTALUM OXIDES
ELECTRIC CONDUCTIVITY
LEAKAGE CURRENT
ACTIVATION ENERGY
CHARGED-PARTICLE TRANSPORT
CURRENT DENSITY
FIELD EMISSION
LOW TEMPERATURE
MEDIUM TEMPERATURE
SILICA
SILICON
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
ENERGY
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION TRANSPORT
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
SILICON OXIDES
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties