Stress accomodation in large-mismatch systems

Conference · Mon Aug 27 00:00:00 EDT 1990 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/0022-0248(91)91004-t· OSTI ID:6616694

Dodson, Brian W. ^[1]

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1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Accomodation of lattice mismatch is investigated for the case of large (ϵ>0.02) mismatch. In particular, the regime where the separation D between misfit dislocations is much less than the strained layer thickness h is considered here. The conventional Matthews-Blakeslee mechanism for creation of misfit dislocations is found to be inadequate for the case of large lattice relaxation owing to interactions amongst the misfit dislocations at the interface. According to St. Venant's principle, the stress fields of the dislocation network are screened beyond a distance D from the dislocation cores. This observation has several consequences, including large densities of threading dislocations and the “melting” of moderately relaxed heterointerfaces at conventional semiconductor growth temperatures. A number of experimental observations may be explained via these models.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Defense Programs (DP)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6616694
• Report Number(s): SAND--90-2282C; CONF-900856--1; ON: DE90017032
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1-4 Vol. 111; ISSN 0022-0248
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
360602* -- Other Materials-- Structure & Phase Studies
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISLOCATIONS
INTERFACES
LATTICE PARAMETERS
LINE DEFECTS
STRESSES