Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

Bae, Sang-Hoon; Lu, Kuangye; Han, Yimo; Kim, Sungkyu; Qiao, Kuan; Choi, Chanyeol; Nie, Yifan; Kim, Hyunseok; Kum, Hyun S.; Chen, Peng; Kong, Wei; Kang, Beom-Seok; Kim, Chansoo; Lee, Jaeyong; Baek, Yongmin; Shim, Jaewoo; Park, Jinhee; Joo, Minho; Muller, David A.; Lee, Kyusang; Kim, Jeehwan

doi:10.1038/s41565-020-0633-5

Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

Journal Article · Sun Feb 09 23:00:00 EST 2020 · Nature Nanotechnology

DOI:https://doi.org/10.1038/s41565-020-0633-5· OSTI ID:1599722

Bae, Sang-Hoon ^[1]; Lu, Kuangye ^[2]; Han, Yimo ^[3]; Kim, Sungkyu ^[2]; Qiao, Kuan ^[2]; ^[2]; Nie, Yifan ^[4]; ^[2]; ^[2]; Chen, Peng ^[2]; Kong, Wei ^[2]; Kang, Beom-Seok ^[2]; Kim, Chansoo ^[2]; Lee, Jaeyong ^[2]; ^[5]; Shim, Jaewoo ^[2]; Park, Jinhee ^[6]; Joo, Minho ^[6]; ^[3]; Lee, Kyusang ^[5] more »

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Massachusetts Institute of Technology
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Cornell Univ., Ithaca, NY (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of Virginia, Charlottesville, VA (United States)
LG Electronics, Seoul (Republic of Korea)

While conventional homoepitaxy forms high-quality epitaxial layers, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances, is fundamentally unavoidable in highly lattice-mismatched epitaxy. Herein, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.

View Accepted Manuscript (DOE)

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); Air Force Research Laboratory (AFRL); National Science Foundation (NSF)

Grant/Contract Number:: EE0008558

OSTI ID:: 1599722

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 4 Vol. 15; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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