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Thermal electron attachment to NO. II. Temperature dependence and implication of the attachment to van der Waals molecules

Journal Article · · J. Chem. Phys.; (United States)
DOI:https://doi.org/10.1063/1.456524· OSTI ID:6613431
Thermal electron attachment in pure NO, NO--Ar, and NO--(n-C/sub 4/ H/sub 10/ ) mixtures has been studied by using a microwave conductivity technique with pulse radiolysis at temperatures between 250 and 350 K. The three-body attachment rate constants for NO and n-C/sub 4/ H/sub 10/ as the third bodies have negative activation energies, -0.035 and -0.038 eV, respectively. The results are well explained by assuming that the initial three-body electron attachment is associated with dimers or van der Waals molecules.
Research Organization:
Fukui Institute of Technology, 3-6-1 Gakuen, Fukui 910, Japan
OSTI ID:
6613431
Journal Information:
J. Chem. Phys.; (United States), Journal Name: J. Chem. Phys.; (United States) Vol. 90:1; ISSN JCPSA
Country of Publication:
United States
Language:
English