On the effect of processing parameters in the chemical-vapor deposition of YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] thin films on polycrystalline silver

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.354007· OSTI ID:6611435

Chen, L; Piazza, T W; Schmidt, B E; Kelsey, J E; Kaloyeros, A E ^[1]; Hazelton, D W; Walker, M S ^[2]; Luo, L; Dye, R C; Maggiore, C J ^[3]; Wilkins, D J; Knorr, D B ^[4]

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1. Department of Physics, The University at Albany-SUNY, Albany, New York 12222 (United States)
2. Intermagnetics General Corporation, Guilderland, New York 12084 (United States)
3. Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
4. Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)

Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta]] (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm O[sub 2] at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760--800 [degree]C for 3--10 min (depending on desired film thickness) in a mixed flow of 70 sccm O[sub 2] and 210 sccm N[sub 2]O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the [ital c] axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2[times]10[sup 4] A/cm[sup 2] (77 K, [ital B]=0).

• OSTI ID: 6611435
• Journal Information: Journal of Applied Physics; (United States), Vol. 73:11; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SUPERCONDUCTING FILMS
CHEMICAL VAPOR DEPOSITION
BARIUM OXIDES
COPPER OXIDES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
HIGH-TC SUPERCONDUCTORS
RECRYSTALLIZATION
RUTHERFORD SCATTERING
SILVER
YTTRIUM OXIDES
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
COPPER COMPOUNDS
DEPOSITION
ELASTIC SCATTERING
ELEMENTS
FILMS
METALS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
SCATTERING
SUPERCONDUCTORS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
YTTRIUM COMPOUNDS
360207* - Ceramics
Cermets
& Refractories- Superconducting Properties- (1992-)