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Title: Mobility and trapping time measurements in HgI/sub 2/

Conference ·
OSTI ID:6608965

The charge transport parameters of a solid-state radiation detector are of paramount importance in determining its spectrometric performance. In this paper various methods of determining mobilities and trapping times for electrons and holes in mercuric iodide (HgI/sub 2/) are reviewed, including mobility-trapping time products via the Hecht relation, mobility measurements by voltage pulse risetime determination, and mobility and trapping time by current pulse shape analysis. Experimental results for HgI/sub 2/ detectors are presented for the different types of measurements described. Among the experimental results presented are three noteworthy items: (1) trapping times for electrons and holes in a variety of different crystals and detectors were obtained from a combination of ..mu..tau and ..mu.. measurements, (2) a new two-source type of experimental setup was developed which gives both the electron and hole pulse spectra simultaneously, and (3) for a one-centimeter thick HgI/sub 2/ detector studied by means of current pulse shape analysis a value of at least 0.03 cm/sup 2//V was found for the product of electron mobility and trapping time; this is the highest value ever reported for HgI/sub 2/ and indicates the quality of electron charge transport parameters that can be attained for this material. 12 references.

Research Organization:
University of Southern California, Marina Del Rey (USA). Inst. for Physics and Imaging Science; Uppsala Univ. (Sweden). Inst. of Tech.
DOE Contract Number:
AM03-76SF00113
OSTI ID:
6608965
Report Number(s):
CONF-8304195-1; ON: DE84015954
Resource Relation:
Conference: Jordan International Electrical and Electronic Engineering conference, Amman, Jordan, 25 Apr 1983; Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English