Transient charge technique investigation of HgI/sub 2/ and CdSe nuclear detectors

Conference · Sun Feb 01 00:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6726229

Roth, M; Burger, A; Nissenbaum, J; Schieber, M

The use of the Transient Charge Technique (TCT) for the evaluation of high resistivity Mercuric Iodide and Cadmium Selenide nuclear radiation detectors is suggested. It has been shown that the real values of mobilities and trapping times of electrons and holes in HgI/sub 2/ can be easily obtained from the analysis of the voltage transient response to drift of charge carriers created by alpha particles. This allows one to evaluate the bulk transport properties of the material and, additionally, to estimate accurately the surface recombination velocity of the carriers. Preliminary results on the shape of voltage transients in CdSe are also reported, and the limitations of the use of the TCT for characterization of both materials are discussed.

• Research Organization: School of Applied Science and Technology, The Hebrew Univ. of Jerusalem, Jerusalem 91904
• OSTI ID: 6726229
• Report Number(s): CONF-861007-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-34:1; Conference: Nuclear science and nuclear power systems symposium, Washington, DC, USA, 29 Oct 1986
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HGI2 SEMICONDUCTOR DETECTORS
CHARGE CARRIERS
TRANSIENTS
ALPHA PARTICLES
CADMIUM SELENIDES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRONS
HOLES
RECOMBINATION
TIME DEPENDENCE
TRAPPING
CADMIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
LEPTONS
MEASURING INSTRUMENTS
PHYSICAL PROPERTIES
RADIATION DETECTORS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DETECTORS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments