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U.S. Department of Energy
Office of Scientific and Technical Information

Materials for high efficiency monolithic multigap concentrator solar cells. Semi-annual report, 1 July-31 December 1980

Technical Report ·
DOI:https://doi.org/10.2172/6602233· OSTI ID:6602233
The objectives of this work are to develop a materials technology of the AlGaInAs and AlInAsSb mixed crystal systems. These technologies are directed towards the development of a two-gap, monolithic, lattice-matched concentrator cell with 28% or higher AM2 conversion efficiency at 500 to 1000 suns. The work to be performed is subdivided into the five major tasks: (1) develop and demonstrate the technology for a grading layer of GaInAs/GaAs and low-bandgap cells in AlGaInAs/GaInAs/GaAs; (2) develop and demonstrate intercell tunnel junction contacts in the higher bandgap AlGaInAs alloys; (3) develop and demonstrate technology for a higher bandgap concentrator cell in AlGaInAs alloys; (4) demonstrate a complete two-gap monolithic concentrator cell with AM2 efficiency of 28% or more; and (5) investigate the potential of AlInAsSb alloys grown on InAs substrates. Progress is reported.
Research Organization:
Varian Associates, Inc., Palo Alto, CA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6602233
Report Number(s):
SERI/TR-8081-1-T3
Country of Publication:
United States
Language:
English