Materials for high efficiency monolothic multigap concentrator solar cells. Quarterly report No. 4, January 1-March 31, 1980

Technical Report · Tue Jan 01 04:00:00 EST 1980

DOI:https://doi.org/10.2172/5147158· OSTI ID:5147158

The objectives of this work are to develop a materials technology of the AlGaInAs and AlInAsSb mixed crystal systems. These technologies are directed towards the development of a two-gap, monolithic, lattice-matched concentrator cell with 28% or higher AM2 conversion efficiency at 500 to 1000 suns. The work to be performed is subdivided into the five major tasks: (1) develop and demonstrate the technology for a grading layer of GaInAs/GaAs and low-bandgap cells in AlGaInAs/GaInAs/GaAs; (2) develop and demonstrate inter-cell tunnel junction contacts in the higher bandgap AlGaInAs alloys; (3) develop and demonstrate technology for a higher bandgap concentrator cell in AlGaInAs alloys; (4) demonstrate a complete two-gap monolithic concentrator cell with Am2 efficiency of 28% or more; and (5) investigate the potential of AlInAsSb alloys grown on InAs substrates. Progress is reported.

• Research Organization: Varian Associates, Inc., Palo Alto, CA (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5147158
• Report Number(s): SERI/PR-8081-1-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ALUMINIUM ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY ALLOYS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CONCENTRATOR SOLAR CELLS
CRYSTAL DOPING
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
FABRICATION
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRADED BAND GAPS
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RESEARCH PROGRAMS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
TUNNEL EFFECT