Evidence of negative charge trapping in high temperature annealed thermal oxide

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6598110

Paillet, P; Herve, D; Leray, J L ^[1]; Devine, R A.B. ^[2]

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1. CEA Centre d'Etudes de Bruyeres, Bruyeres-Le-Chatel (France)
2. France Telecom/CNET, Meylan (France)

The effect of high temperature processing of Si/SiO[sub 2]/Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal interfacial trapping behavior, whereas annealed structures exhibit a large trapping of both holes and electrons in the bulk of the oxide, similar to SIMOX oxide behavior.

• OSTI ID: 6598110
• Report Number(s): CONF-930953--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
DATA
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
HEAT TREATMENTS
INFORMATION
INTERFACES
ION IMPLANTATION
JUNCTIONS
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRAPPING