Total dose response of transconductance in MOSFETs at low temperature
- RLP Research, Inc., Albuquerque, NM (United States)
- Naval Surface Warfare Center, Crane, IN (United States)
- S-Cubed, Mission Viejo, CA (United States)
N and p channel MOSFETs from four bulk CMOS technologies and two CMOS/SIMOX technologies were characterized for total dose response up to 1 Mrad (SiO[sub 2]) at temperatures from 10K to 120K. The peak transconductance in the linear region increased in n channel devices and decreased in p channel devices for devices with lightly doped drain (LDD) implants. These changes were much larger as the temperature was decreased and were as much as a factor of 50 in p MOSFETs at 10K. The one technology without LDD showed only a minor change in g[sub m] with dose even at 10K. The changes in transconductance are most likely a result of hole trapping in the spacer oxide affecting the series resistance.
- OSTI ID:
- 6598082
- Report Number(s):
- CONF-930953--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
FUNCTIONS
HARDENING
MOS TRANSISTORS
MOSFET
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE DEPENDENCE
TRANSISTORS
TRAPS