Transport properties in 100 mm CZ silicon

Conference · Tue Jan 01 04:00:00 EST 1980 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6596762

Phuoc, N T ^[1]; Fabre, E

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1. Laboratoires d'Electronique et de Physique Appliquee, Limeil-Brevannes, Val-de-Marne, France

The investigation of the minority carrier transport properties, which govern the conversion efficiency of the solar cells, the starting material being 100-mm Czochralski single-crystal silicon, is carried out. HeNe and YAG laser beam scanning makes the determination of the minority carrier diffusion length and the study of its homogeneity across the surface of the wafer possible. A general degradation of the diffusion length with high temperature annealing and the possibility of minimizing this degradation under specific gettering conditions are noted. The super-linear dependence of the photocurrent upon the light flux, which partly compensates for the degradation of the diffusion length after annealing, is observed.

• OSTI ID: 6596762
• Report Number(s): CONF-800106-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CARRIER MOBILITY
CRYSTAL GROWTH METHODS
CURRENTS
CZOCHRALSKI METHOD
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EQUIPMENT
GAS LASERS
HEAT TREATMENTS
HELIUM-NEON LASERS
LASERS
LENGTH
MOBILITY
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THERMAL DEGRADATION