Recognition and characterization of precipitates in annealed Cz and FZ silicon by S.I.R.M. and L.B.I.C.
Conference
·
OSTI ID:405538
- Laboratoire de Photoelectricite des Semi-Conductors, Marseille (France)
A Scanning Infrared Microscope, a Light Beam Induced Current mapping equipment, a Fourier Transform infrared spectroscope, and a minority carrier diffusion length measurement tool have been associated to detect precipitates in annealed Czochralski silicon wafers and to evaluate their recombination strength with or without metallic contamination. The influence of a phosphorus diffusion was also investigated. A comparison is made with Float Zone silicon which contains less oxygen.
- OSTI ID:
- 405538
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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