Minority-carrier diffusion lengths in GaP/GaAs/sub x/P/sub 1-x/ strained-layer superlattices

Journal Article · Tue May 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94620· OSTI ID:6596127

Gourley, P L; Biefeld, R M; Zipperian, T E; Wiczer, J J

We have made the first measurements of the minority-carrier diffusion lengths L/sub parallel/ and L/sub perpendicular/ respectively in both n- and p- type GaP/GaAs/sub x/P/sub 1-x/ <100> strained-layer superlattices (SLS's) in directions parallel and perpendicular to the interfaces. Using room-temperature optical techniques, we find that L/sub perpendicular/roughly-equal0.1 ..mu..m, which is more than an order of magnitude smaller than L/sub parallel/roughly-equal1.5 ..mu..m. The latter is comparable to that measured in the bulk materials which comprise the SLS layers, while the former demonstrates the existence of large potential barriers in both the conduction and valence bands.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6596127
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 44:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
DIFFUSION LENGTH
GALLIUM PHOSPHIDES
SUPERLATTICES
CHARGE CARRIERS
POTENTIALS
VALENCE
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
GALLIUM COMPOUNDS
LENGTH
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
360603* - Materials- Properties