Spectroscopic ellipsometry and Raman scattering study of the annealing behavior of Be-implanted GaAs

Journal Article · Wed Aug 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95231· OSTI ID:6595754

Chambon, P; Erman, M; Theeten, J B; Prevot, B; Schwab, C

The annealing of the lattice damage induced by Be-ion implantation in GaAs has been studied by spectroscopic ellipsometry and Raman scattering after each step of an isochronal thermal treatment. These two optical (i.e., nondestructive) techniques are shown to be very sensitive both to the lattice recovery and to the electrical activation of the implants. It has been observed that the latter process occurs after the lattice perfection recovery at T = 550 /sup 0/C, while for the ultimate annealing temperatures (T>750 /sup 0/C) a significant Be redistribution takes place resulting in a decrease of the electrical activity which is confirmed by differential Hall effect measurements.

• Research Organization: Laboratoires d'Electronique et de Physique Appliquee, 3, Avenue Descartes, 94450 Limeil Brevannes, France
• OSTI ID: 6595754
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM IONS
CHARGED PARTICLES
DAMAGE
ELECTRICAL PROPERTIES
ELLIPSOMETRY
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
MATERIALS TESTING
MEASURING METHODS
NONDESTRUCTIVE TESTING
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RAMAN EFFECT
TESTING