Effects of [gamma]-rays and neutrons on the noise behavior of monolithic JFET circuits
- Univ. di Pavia (Italy). Dipt. di Elettronica
- INFN, Milano (Italy). Sezione di Milano
Two monolithic technologies based upon JFETs were characterized from the point of view of their noise sensitivity to [gamma] and neutron irradiation. Noise measurements on devices and circuits irradiated up to 100 Mrad(Si) absorbed dose of [gamma]-rays and 4[center dot]10[sup 14] neutrons/cm[sup 2] are presented. The experimental results show that the equivalent noise voltage spectrum is largely affected in the frequency region below 1 MHz. A smaller effect is observed in the high frequency region were channel thermal noise is dominant. Accordingly, the equivalent noise charge does not sizably increase at the short signal processing times, below 100 ns, that are of interest for applications at high luminosity colliders.
- OSTI ID:
- 6594958
- Report Number(s):
- CONF-930953--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATORS
DATA
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GAMMA RADIATION
INFORMATION
IONIZING RADIATIONS
JUNCTION TRANSISTORS
NOISE
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SENSITIVITY
TRANSISTORS