Computer modeling and radiation testing of AlGaAs photodiode structures

Journal Article · Mon Nov 30 23:00:00 EST 1981 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1981.4335726· OSTI ID:6590316

Osbourn, G C; Dawson, L R; Wiczer, J J

A detailed one-dimensional computer model has been used to identify the device characteristics which determine the undesirable current induced in various AlGaAs photodiode structures by ionizing radiation. The calculations were performed to aid in the design of AlGaAs photodiode structures operating at lambda=.82..mu..m with optimized radiation insensitivities. Various AlGaAs photodiode structures have been grown and experimentally characterized to test the model. Good agreement between calculated and measured characteristics have been obtained, indicating that the model provides a good description of the factors affecting the radiation sensitivity and the optical response of AlGaAs photodiodes.

• Research Organization: Sandia National Lab., Albuquerque, NM
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6590316
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-28:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM
ARSENIC
CURRENT DENSITY
DATA
ELEMENTS
EXPERIMENTAL DATA
GALLIUM
INFORMATION
IONIZING RADIATIONS
METALS
NUMERICAL DATA
PHOTODIODES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
STRUCTURAL MODELS
TESTING
VALIDATION