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The effect of temperature on the radiative performance of Ho-YAG thin film selective emitters

Conference ·
OSTI ID:6590284
The authors present the emitter efficiency results for the thin film 25 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) selective emitter from 1000 to 1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for thermophotovoltaic (TPV) applications.
Research Organization:
National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
OSTI ID:
6590284
Report Number(s):
N-95-18587; NASA-TM--106830; E--9380; NAS--1.15:106830; CONF-941203--; CNN: RTOP 233-01-0A
Country of Publication:
United States
Language:
English