The effect of thickness and temperature on the performance of thin film selective emitters for thermophotovoltaic applications

Book · Sun Dec 31 04:00:00 EST 1995

OSTI ID:163317

Lowe, R A ^[1]; Good, B S; Chubb, D L ^[2]

---

1. Kent State Univ., OH (United States)
2. NASA Lewis Research Center, Cleveland, OH (United States)

In this paper the authors present results for the effect of emitter thickness and temperature on the radiative efficiency of the thin film rare earth YAG (Yttrium Aluminum Garnet, Y{sub 3}Al{sub 5}O{sub 12}) selective emitter. Spectral emittance and emissive power measurements were made (1.2 < {lambda} < 3.2 {mu}m) and used to calculate the radiative efficiency. A series of 40% erbium YAG specimens ranging in thickness from 0.3 to 2.0mm with a platinum substrate at 1,500 K are used to investigate the effect of thickness on efficiency. To demonstrate the effect of temperature on efficiency a 25% holmium YAG emitter with a platinum substrate from 1,000 to 1,700 K is used. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on thickness and temperature and experimental results indicate an optimum thickness of 0.7 < d < 1.0 mm for 40% Er YAG and an optimum temperature of 1,650 K for selective emitters doped with Ho.

• OSTI ID: 163317
• Report Number(s): CONF-950729--
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
ALUMINIUM OXIDES
DOPED MATERIALS
EMISSIVITY
ERBIUM
EXPERIMENTAL DATA
HOLMIUM
MATERIALS
THERMOPHOTOVOLTAIC CONVERTERS
YTTRIUM OXIDES