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Title: Optics and calculated efficiencies of mechanically stacked two-junction solar cells

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339744· OSTI ID:6587004

Mechanically stacked two-junction solar cells avoid the multijunction problems of interfering growth conditions, shorting layers, and current matching. They also allow the use of well-developed Si and GaAs junctions. Doping the top junction substrates at 2(10/sup 17/) cm/sup -3/ reduces measured free-carrier absorption by up to a factor of 5 compared to doping at 8(10/sup 17/) cm/sup -3/. Separately measured quantum-yield spectra, open-circuit voltages, and fill factors provide the basis to calculate stack efficiencies of 24%--28% for Si stacked under GaAsP and GaAs top junctions for a direct air mass 1.5 (AM1.5D)= terrestrial sunlight spectra and a 400 x light concentration. The GaAs is a preferred top junction because it has a direct gap, operates at near its theoretical limits, and minimizes transmission loss effects by contributing over 70% of the total stack output without compromising potential stack performance. The open-circuit voltages of GaAs and Si cells are measured to vary with light intensity as predicted by the standard model with a junction ideality factor equal to 1.0. This and other experimental junction data provide the basis to calculate 400 x , AM1.5D stack efficiencies of 29% for GaAs stacked on Ge and 30% for GaAs stacked on GaSb. Device improvements are suggested to project GaAs/Ge stack efficiencies of 30% and GaAs/GaSb stack efficiencies of 34% for 400 x , AM1.5D. The 400 x , AM0 efficiencies for space are 0.88 to 0.91 times the corresponding, terrestrial AM1.5D values.

Research Organization:
Chevron Research Company, Richmond, California 94802
OSTI ID:
6587004
Journal Information:
J. Appl. Phys.; (United States), Vol. 62:2
Country of Publication:
United States
Language:
English