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Title: Bandgap Engineering in High-Efficiency Multijunction Concentrator Cells

Conference ·
OSTI ID:15020414

This paper discusses semiconductor device research paths under investigation with the aim of reaching the milestone efficiency of 40%. A cost analysis shows that achieving very high cell efficiencies is crucial for the realization of cost-effective photovoltaics, because of the strongly leveraging effect of efficiency on module packaging and balance-of systems costs. Lattice-matched (LM) GaInP/ GaInAs/ Ge 3-junction cells have achieved the highest independently confirmed efficiency at 175 suns, 25?C, of 37.3% under the standard AM1.5D, low-AOD terrestrial spectrum. Lattice-mismatched, or metamorphic (MM), materials offer still higher potential efficiencies, if the crystal quality can be maintained. Theoretical efficiencies well over 50% are possible for a MM GaInP/ 1.17-eV GaInAs/ Ge 3-junction cell limited by radiative recombination at 500 suns. The bandgap - open circuit voltage offset, (Eg/q) - Voc, is used as a valuable theoretical and experimental tool to characterize multijunction cells with subcell bandgaps ranging from 0.7 to 2.1 eV. Experimental results are presented for prototype 6-junction cells employing an active {approx}1.1-eV dilute nitride GaInNAs subcell, with active-area efficiency greater than 23% and over 5.3 V open-circuit voltage under the 1-sun AM0 space spectrum. Such cell designs have theoretical efficiencies under the terrestrial spectrum at 500 suns concentration exceeding 55% efficiency, even for lattice-matched designs.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
15020414
Report Number(s):
NREL/CP-520-38689; TRN: US200518%%311
Resource Relation:
Conference: NREL/CD-520-38172
Country of Publication:
United States
Language:
English