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Recent progress in ceramic joining

Conference ·
OSTI ID:658463

Both fundamental and practical aspects of ceramic joining are understood well enough for many, if not most, applications requiring moderate strengths at room temperature. This paper argues that the two greatest needs in ceramic joining are for techniques to join buried interfaces by selective heating, and methods for joining ceramics for use at temperatures of 800 to 1,200 C. Heating with microwave radiation or with high-energy electron beams has been used to join buried ceramic interfaces, for example SiC to SiC. Joints with varying levels of strength at temperatures of 600 to 1,000 C have been made using four techniques: (1) transient liquid phase bonding; (2) joining with refractory braze alloys; (3) joining with refractory glass compositions; and (4) joining using preceramic polymers. Joint strengths as high as 550 MPa at 1,000 C have been reported for silicon nitride-silicon nitride bonds tested in four-point flexure.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
658463
Report Number(s):
SAND--98-1341C; CONF-980912--; ON: DE98005922; BR: ED1902000
Country of Publication:
United States
Language:
English

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