Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands
Journal Article
·
· Physical Review Letters
- Department of Materials Science and Engineering, University of Wisconsin---Madison, Madison, Wisconsin 53706 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1413 (United States)
High-resolution scanning tunneling microscopy studies of the Si(100)-( 2{times}1) surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least three dimers away from the adsorption sites. We present a realistic structural model. {copyright} {ital 1998} {ital The American Physical Society}
- OSTI ID:
- 657814
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 11 Vol. 81; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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