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Research on high-efficiency, multiple-gap, multi-junction amorphous silicon-based alloy thin-film solar cells

Technical Report ·
OSTI ID:6568228
 [1]
  1. Energy Conversion Devices, Inc., Troy, MI (USA)
This report documents the results of material development, single- junction solar cell research, and high-efficiency multijunction cell development. High-quality a-Si:Ge:H:F alloys were made with optical band gaps as low as 1.3 eV; high-conductivity microcrystalline p{sup +} and n{sup +} doped alloys were developed with optical band gaps greater than 2 eV. A double-layer antireflection coating was developed, and the cell's quantum efficiency at 400 nm improved from 60% to 77%. A novel solar cell structure was developed using band gap profiling in the intrinsic layer to obtain high efficiency. Single-junction solar cells with a-SiGe:H alloys in the intrinsic layer were fabricated with active-area efficiencies of 9.7%. Dual-gap tandem cells were fabricated with active-area efficiencies of 13%, and triple-junction cells were fabricated with active-area efficiencies of 13.7%--the highest reported to date for any thin-film amorphous solar cell. Degradation rates of 12%--17% after 300 hours illumination were measured in triple-junction cells, a significant increase over the degradation of single-junction cells with comparable efficiencies. A triple-junction module with a subaperture area of 818 cm{sup 2} was measured at SERI with a conversion efficiency of 8.4%. 27 refs., 72 figs., 15 tabs.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Energy Conversion Devices, Inc., Troy, MI (USA)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6568228
Report Number(s):
SERI/TP-211-3918; ON: DE90000364; CNN: ZB-7-06003-4
Country of Publication:
United States
Language:
English

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