Research on high-efficiency, multi-gap, multijunction, amorphous-silicon-based alloy thin-film solar cells: Phase I annual subcontract report, 1 March 1987--29 February 1988

Technical Report · Mon Aug 01 04:00:00 EDT 1988

OSTI ID:6462483

Guha, S

This report describes the first year of progress in research directed toward material development, single-junction solar cell research, and deployment of high-efficiency multijunction solar cells prepared of alloys of amorphous silicon. High-quality a-SiGe alloys were made with a band gap of 1.4 eV. Incorporation of this material in tandem and triple-junction cells resulted in the world's highest efficiency a-Si based alloy thin-film solar cells to date. Efficiencies of 12.7% for dual-gap tandem and 13.6% for dual-gap triple cells were measured under global AM1.5 illumination at 25/degree/C. Further optimization of materials and device designs should result in efficiencies of about 15% during Phase II of the program. 21 refs., 51 figs., 19 tabs.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA); Energy Conversion Devices, Inc., Troy, MI (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6462483
• Report Number(s): SERI/STR-211-3373; ON: DE89000845
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
DATA
DESIGN
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
EFFICIENCY
EQUIPMENT
FILMS
INFORMATION
JUNCTIONS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PROGRESS REPORT
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS