Spectroscopic diagnostics of CF/sub 4/-O/sub 2/ plasmas during Si and SiO/sub 2/ etching processes
The emission intensities in the range of 2000--8000 A of CF, CF/sub 2/, O, F, CO, CO/sup +/, and CO/sub 2/ produced in CF/sub 4//O/sub 2/ radio-frequency discharges, operated at 1 Torr of pressure and 50 W of power input, have been used to follow the etching process of Si and SiO/sub 2/, as a function of the CF/sub 4//O/sub 2/ feed composition. The addition of small amounts of nitrogen or argon to the plasma mixtures has permitted the determination of the effect of the oxygen addition to the gas feed on the electron densities of the plasma for a wide range of electron energies. The relative concentration profiles of F and O, as well as of CO and CO/sub 2/, have been determined with this technique, as a function of the oxygen content in the feed. The important role played by atomic F as active etchant for both Si and SiO/sub 2/ substrates has been confirmed.
- Research Organization:
- Centro di Studio per la Chimica dei Plasmi del C. N. R., Istituto di Chimica Generale ed Inorganica dell'Universita, Bari, Italy
- OSTI ID:
- 6563638
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON COMPOUNDS
CARBON DIOXIDE
CARBON MONOXIDE
CARBON OXIDES
CARBON TETRAFLUORIDE
CHALCOGENIDES
ELECTRIC DISCHARGES
ELECTRON DENSITY
ELEMENTS
ETCHING
FLUORINATED ALIPHATIC HYDROCARBONS
FLUORINE
HALOGENATED ALIPHATIC HYDROCARBONS
HALOGENS
LOW PRESSURE
NITROGEN
NONMETALS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PLASMA DIAGNOSTICS
QUANTITY RATIO
RF SYSTEMS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
SURFACE FINISHING
WAVELENGTHS