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Band-edge properties of Hg-based superlattices

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.576192· OSTI ID:6555225
Recent advances in the understanding of band-edge properties in Hg-based superlattices are discussed. A systematic consideration of the theoretical band structure as a function of superlattice parameters demonstrates that the in-plane and growth-direction dispersion relations for the uppermost valence band are extremely sensitive to whether the valence-band offset is small or large. Magnetotransport measurements have been performed on a large number of HgTe--CdTe and Hg/sub 1-//sub x/Zn/sub x/Te--CdTe superlattices. Band gaps determined from the temperature dependence of the intrinsic carrier density are found to agree well with theoretical values if a large value (350 meV) is employed for the valence-band offset. Furthermore, the electron and hole mobilities display a number of distinctive features which are quite consistent with calculated band structures as long as a large valence-band offset is employed. However, the data and theory cannot be reconciled if a small offset is assumed.
Research Organization:
Naval Research Laboratory, Washington, D. C. 20375
OSTI ID:
6555225
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
Country of Publication:
United States
Language:
English