Use of a metal-nitride-oxide-semiconductor as the detector for a radiation dosimeter
Technical Report
·
OSTI ID:6552177
A method of radiation dosimetry using a Metal-Nitride-Oxide-Semiconductor (MNOS) device as the detector was developed and partially evaluated. The MNOS devices are capable of measuring doses from 10 k rads to 4 M rads. Repeatability of observations indicates a precision of + or - 1% of total dose from 200 k rads to 4M rads (Si). Dosage in rads is obtained by reference to a calibrated source exposure rate and not to dose absorbed within the dosimeter. A Co60 source was used for all radiation testing. Schematics are given for some of the circuits tested. Determination of dosage from the system is indirect and requires the use of a calibration curve. Each dosimeter must be calibrated from a known source. Direct readout of dose is suggested by use of a microprocessor. Exposure to 20,000,000 rads did not degrade performance. Devices eventually failed due to charge migration from the large integrated circuit chip on which they were fabricated. Discrete, non-stepped gate MNOS transistors are recommended.
- Research Organization:
- Air Force Inst. of Tech., Wright-Patterson AFB, OH (USA). School of Engineering
- OSTI ID:
- 6552177
- Report Number(s):
- AD-A-055187; AFIT/GNE/PH-78M-3
- Country of Publication:
- United States
- Language:
- English
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