Origin of the difference in the open circuit voltage between p-i-n type and n-i-p type hydrogenated amorphous silicon solar cells

Journal Article · Mon Jan 31 23:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93915· OSTI ID:6551680

Sakata, I; Hayashi, Y

The origin of the difference in the open circuit voltage V/sub oc/ between a p-i-n and n-i-p type hydrogenated amorphous silicon solar cells is discussed theoretically, considering the interaction of photogenerated free electrons and holes, i.e., the effect of a self-field. It has been clarified that the self-field aids the carrier collection in an n-i-p cell whereas it impedes the carrier collection in a p-i-n cell. This difference in the effect of the self-field on the photovoltaic process causes the difference in V/sub oc/ between these two type cells.

• Research Organization: Semiconductor Device Section, Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Niiharigun, Ibaraki 305, Japan
• OSTI ID: 6551680
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHARGE CARRIERS
CHARGE COLLECTION
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRONS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
HOLES
HYDROGENATION
INTERACTIONS
LEPTONS
MATHEMATICAL MODELS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT