Relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells

Journal Article · Sun May 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340414· OSTI ID:5253611

Hegedus, S S; Salzman, N; Fagen, E

We have measured the current-voltage characteristics of a-Si:H p-i-n solar cells having open-circuit voltages (V/sub oc/) between 0.70 and 0.90 V as a function of temperature and light intensity. The diode parameters (diode factor, saturation current density, and built-in voltage) were calculated in the light and in the dark. We find that parameters obtained in the dark have no relevance to the analysis of V/sub oc/, but they do indicate that tunneling may be a significant effect in the dark. The V/sub oc/ is dominated by recombination at the pi interface or in the i layer near this interface. Reducing interface recombination with a carbon buffer layer and reducing bulk recombination with less i layer impurities improves V/sub oc/ by reducing the forward recombination current density

• Research Organization: Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716
• OSTI ID: 5253611
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
HYDROGENATION
INFORMATION
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SILICON ALLOYS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING