Material requirements for buffer layers used to obtain solar cells with high open circuit voltages
Conference
·
OSTI ID:20107973
This paper discusses material requirements for junction layers needed to obtain solar cells with highest possible open-circuit voltages (V{sub OC}). In a typical a-Si:H-based p/i/n solar cell, this includes the transparent conductive oxide (TCO) contact layer, the p-layer, a buffer layer inserted at the p/i interface, and the surface portion of the intrinsic layer. In HIT-cells, the i-layer between (n-type) c-Si and (p-type) a-Si:H may be regarded as the buffer. The authors suggestion to obtain high values of V{sub OC} relies on using materials with high lifetimes and low carrier mobilities that are capable of reducing surface or junction recombination by reducing the flow of carriers into this loss-pathway. They provide a general calculation that supports these approaches and can explain why these schemes are beneficial for all solar cells.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 20107973
- Country of Publication:
- United States
- Language:
- English
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