Optoelectronic materials, devices, packaging, and interconnects; Proceedings of the Meeting, San Diego, CA, Aug. 19-21, 1987

Conference · Thu Dec 31 23:00:00 EST 1987

OSTI ID:6547481

Batchman, T E; Carson, R F; Gallawa, R L; Wojtunik, H J

Recent advances in optoelectronic materials and their applications are considered in reviews and reports. Topics addressed include sensors and environmental effects; sources and detectors; semiconductor optoelectronic materials, devices, and structures; nonlinear guided-wave optics and bistability; fiber coupling and packaging; and optoelectronic and IC interconnects. Particular attention is given to the response of integrated optics to nuclear irradiation, ultrafast photoconductor radiation detectors, the concentration-dependent Ti center and the ordinary optical index of LiNbO3, ion-exchange fabrication of REE-doped waveguides, spin-polarization studies of Heusler alloys, self-sustained psec pulse generation from laser diodes, photorefractive effects in GaAs, MQW tunneling computations for asymmetric superlattices, multiple-fiber interconnects using Si V-grooves, and plasma-etched polymer waveguides for intrachip optical interconnects.

• OSTI ID: 6547481
• Report Number(s): CONF-8708229-
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
INTEGRATED CIRCUITS
IRRADIATION
JOINING
JUNCTIONS
MATERIALS
MEASURING INSTRUMENTS
MEETINGS
MICROELECTRONIC CIRCUITS
OPTICAL SYSTEMS
PHOSPHORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SULFIDES
SULFUR COMPOUNDS
THIN FILMS
WAVEGUIDES