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Title: Critical currents of ion-beam sputtered amorphous beryllium thin films and their application to an Abrikosov vortex memory

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339184· OSTI ID:6546376

Critical current and flux pinning were examined for ion-beam sputtered (IBS)= amorphous beryllium (a-Be) thin films with T/sub c/ 6 K. Pinning forces in IBS a-Be films were one or more than one order of magnitude smaller than those for crystalline superconductors, but were still rather large for amorphous superconductors. The viscosity coefficient for IBS a-Be was very small, 1--2 x 10/sup -9/ N s/m/sup 2/, which was only a few tenths as large as viscosity coefficients for other metallic superconductors. Write operation characteristics for Abrikosov vortex memory with an IBS a-Be vortex storage region was tested. The write current level was reduced to about two thirds of that for fine-grained PbInAu previously reported. IBS a-Be films were proved to be a potential material for use in an Abrikosov vortex memory.

Research Organization:
NTT Electrical Communications Laboratories, Tokai, Ibaraki 319-11, Japan
OSTI ID:
6546376
Journal Information:
J. Appl. Phys.; (United States), Vol. 62:1
Country of Publication:
United States
Language:
English